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| 2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application TO-3P Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features * * * * * * * Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 3 1 2 3 1 1. Gate 2. Source (Flange) 3. Drain 2 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1056 Symbol VDSX Ratings 120 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1057 ------ 140 ---------- 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID IDR Pch* Tch Tstg ------ 160 15 7 7 100 150 -55 to +150 V A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * Value at TC = 25 C 2SK1056, 2SK1057, 2SK1058 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1056 Symbol V(BR)DSX Min 120 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = -10 V -------------------------------------------------------------------------------------- -------- 2SK1057 ---- 140 -------- 2SK1058 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time * Pulse Test V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff ---- 160 15 -- -- V IG = 100 A, VDS = 0 ID = 100 mA, VDS = 10 V ID = 7 A, VGD = 0 * ID = 3 A, VDS = 10 V * VGS = -5 V, VDS = 10 V, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 0.15 -- -- -- 1.45 12 V V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 0.7 -- -- -- -- -- 1.0 600 350 10 180 60 1.4 -- -- -- -- -- S pF pF pF ns ns VDD = 20 V, ID = 4 A, -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SK1056, 2SK1057, 2SK1058 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 20 Maximum Safe Operation Area Ta = 25C ID max (Continuous) P PW 5 PW W = = 1 10 0 m = 0s 1 m1 s s sh 1 2 1 ot sh sh ot ot 1.0 C D O pe ra tio n (T C = 25 C ) 10 100 50 Drain Current ID (A) 0.5 2SK133 0 50 100 Case Temperature TC (C) 150 0.2 5 2SK134 2SK135 500 10 20 50 100 200 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 VGS = 10 V 9 8 7 6 4 5 4 2 Pch = Typical Transfer Characteristics 1.0 -2 5C 25 75 8 Drain Current ID (A) TC = 25C Drain Current ID (A) 0.8 VDS = 10 V 6 0.6 0.4 3 100 W 0.2 2 1 0 0 10 20 40 50 30 Drain to Source Voltage VDS (V) 0 0.4 0.8 1.6 2.0 1.2 Gate to Source Voltage VGS (V) T C= 2SK1056, 2SK1057, 2SK1058 Drain to Source Saturation Voltage vs. Drain Current 10 Drain to Source Saturation Voltage VDS (on) (V) 5 10 Drain to Source Voltage vs. Gate to Source Voltage 25 TC 2 1.0 0.5 =- 25 C Drain to Source Voltage VDS (V) VGD = 0 75 8 TC = 25C 6 5 4 0.2 0.1 0.1 2 2 ID = 1 A 6 2 4 8 10 Gate to Source Voltage VGS (V) 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 0 Input Capacitance vs. Gate Source Voltage Forward Transfer Admittance yfs (S) 1000 Input Capacitance Ciss (pF) 3.0 1.0 0.3 0.1 0.03 0.01 0.003 10 k Forward Transfer Admittance vs. Frequency 500 200 VDS = 10 V f = 1 MHz 100 0 -2 -4 -6 -8 -10 Gate to Source Voltage VGS (V) TC = 25C VDS = 10 V ID = 2 A 30 k 100 k 300 k 1 M 3 M Frequency f (Hz) 10 M 2SK1056, 2SK1057, 2SK1058 Switching Time vs. Drain Current 500 Switching Time Test Circuit Switching Time ton,toff (ns) 200 100 Input 50 t off 20 10 5 0.1 PW = 50s duty ratio =1% 50 20 V t on Output 2 0.2 0.5 1.0 2 Drain Current ID (A) 5 10 Waveforms 90 % Input 10 % t on t off 10 % Output 90 % |
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